1 Watt Power Amplifier SMT, 1.7 - 2.2 GHz
The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.
- CDMA & W-CDMA
- GSM, GPRS & Edge
- Base Stations & Repeaters
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
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Tape & Reel Specification
QSOP 16 Tape Specification (QS16, QS16G)
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