高温

ADI了解到许多应用需要能在125°C以上环境下工作的信号处理解决方案。ADI针对石油和天然气勘探、地热监测、工业引擎控制及其他应用推出了能在高温环境下工作的产品。 我们对技术、质量和可靠性的关注为客户带来了创新的解决方案。

IntroFor applications that push the boundaries of extreme temperature, whether it is steering an oil drill operating a mile underground or making precision measurements on a jet engine, specialized solutions are required to ensure performance and reliability. For these and other demanding applications, ADI offers products designed for extreme temperatures, with a portfolio qualified at 175°C and 210°C.

ADI has developed unique capability to meet the demands of high temperature applications, including:

  • Advanced design techniques
  • Robust silicon processes
  • Innovative packaging
  • Comprehensive qualification and test

This capability enables us to develop products that must have high performance, high reliability, small footprint and low power in extreme harsh, high temperature environments.

特色产品

 

Technology Enabling High Temperature Products

Introduction

X+

Standard integrated circuits are typically only designed and specified for a maximum operating temperature of 125°C. Beyond that, many factors can decrease performance and reliability with exposure to extreme temperature. For example, exponentially increasing substrate leakage current and variation of device parameters over temperature can significantly degrade performance. Reliability can be compromised by silicon level concerns such as electromigration and by package level issues such as wire bond wear out. In order to overcome these challenges, products in ADI’s high temperature portfolio have been designed and qualified for high temperature operation using innovative silicon processes, packaging, and test technologies.

Silicon Process

X+
One enabling silicon technology utilized on several ADI  HT products is our silicon‐on-insulator (SOI) bipolar process. In the diagram below, we compare a typical NPN transistor on a normal junction isolated (JI) bipolar process with the SOI process. The arrows on JI process depict the paths for current leakage within the device and also the parasitic paths for current leakage to the substrate (shown in black arrows).
 
As temperature increases, the effects current leakage increases exponentially, significantly degrading the performance of the device. The SOI process uses a insulating dielectric layer of SiO2 which blocks parasitic current flow in the substrate. By eliminating this parasitic leakage path, device performance can be maintained to very high temperatures.


Figure 5

Advanced Packaging

X+

Another enabling technology for package reliability at high temperature is ADI’s specialized wire bond process for HT plastic packages. Normal gold/aluminum wire bonds will degrade over temperature with formation of intermetallic compounds that are brittle and form voids and weaken the strength of the bond. This can happen in as little as several hundred hours. Our HT plastic packages utilize an additional metallization step with NiPdAu (shown at tile) in order to have a gold bond pad surface, which together with a gold wire create a mono‐metallic bond that will not form intermetallics. The graphic below shows the reliability improvements gained with this technology — the standard Au/Al bond on the tile has significant voiding and intermetallic formation at 500 hours, while the bond with the NiPdAu metallization process on the right maintains integrity with over 6000 hours of high temperature exposure.

Advanced Packaging Nickle Palladium

 

Au/Al wire bond post 500 hours at 195°C


Advanced Packaging AuAi Posts

Au/Au wire bond with NiPdAu barrier post 6000 hours at 195°C


Advanced Packaging AuOPMi Bond

Reliability Qualification

X+
Reliability Qualification

ADI’s process flow for HT products includes a comprehensive reliability qualification program tailored to the needs of high temperature applications. All HT products are qualified with the High Temperature Operating Life (HTOL) test, which is performed to JEDEC JESD22‐A108 specifications. A minimum of three assembly lots for each product are tested at maximum temperature for a minimum of 1000 hours and ensured to meet datasheet specifications. In addition to this and other qualification tests, robustness tests such as Latch-up immunity, MIL-STD-883 Group-D Mechanical, and ESD are also performed. Reliability reports for high temp portfolio products are available upon request.

信号链

(1)

点击以下系统框图

评估套件

X +

EVAL-ADG798 电路图

产品详情

EVAL-ADG798EB1Z是一款用于ADG798高温8:1多路复用器的评估板。整个板组件由耐高温材料构建,在温度高达210°C时适合短时器件评估。


ADG798焊接到评估板中心,接头用于连接各源极和漏极引脚。4引脚接头为该器件供电并提供用户定义的数字逻辑电源电压。


ADG798数据手册提供ADG798的完整规格,使用评估板时应同时参考用户指南UG-1039与数据手册。

EVAL-ADG5298 电路图

产品详情

EVAL-ADG5298EB1Z是一款用于ADG5298高温8:1多路复用器的评估板。整个板组件由耐高温材料构建,在温度高达210°C时适合短时器件评估。


ADG5298焊接到EVALADG5298EB1Z评估板中心,接头用于连接各源极和漏极引脚。四引脚接头为该器件供电并提供用户定义的数字逻辑电源电压。


ADG5298数据手册提供ADG5298的完整规格,使用EVAL-ADG5298EB1Z评估板时应同时参考用户指南UG-1038与数据手册。

EVAL-ADXRS645 电路图

产品详情

EVAL-ADXRS645Z是一款简单的紧凑式分线板,有利于快速评估耐高温、±2000°/s模拟输出单轴速率陀螺仪ADXRS645的性能。 利用该评估板可在试验台上评估整个温度范围内的器件性能,有助于系统集成。


EVAL-ADXRS645Z有两组5引线、0.1 英寸引脚间距的电镀通孔,用于实现ADXRS645与现有系统的电气连接。 EVAL-ADXRS645Z还提供4个安装孔,用于将该板机械连接至应用。 EVAL-ADXRS645Z的尺寸为1.275英寸 × 1.275英寸 (32.38 mm × 32.38 mm),带两组安装孔。 外侧的一组孔直径为0.15英寸 (3.81 mm),以印刷电路板(PCB)的中心为中心排列成1.0英寸 × 1.0英寸 (25.4 mm × 25.4 mm)的方形。


图1和图2分别显示EVAL-ADXRS645Z评估板的布局图和原理图。 表1列出了板上搭载的器件。 “物料清单”部分中的所有器件(包括聚酰亚胺层压PCB)均能在175°C高温下工作,支持在高温下进行短时间测试。 整个组件未在高温下进行长时间使用测试。


原理图、布局图和板本身给出了引脚名称以便识别。 有关引脚功能的更多信息,请参阅ADXRS645数据手册。 R2是一个焊接链路跳线,用于将VRATIO连接到板上的VCC输入(参见图2)。 默认安装R2,若要使用单独的 VRATIO ,则须移除R2。


R1处可安装一个电阻,用以扩大器件的测量范围。 有关此特性的更多信息,请参阅ADXRS645数据手册。